Product Datasheet Search Results:

SPB21N50C3.pdf12 Pages, 479 KB, Original
SPB21N50C3
Infineon Technologies Ag
21 A, 500 V, 0.19 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
SPB21N50C3ATMA1.pdf12 Pages, 479 KB, Original
SPB21N50C3ATMA1
Infineon Technologies Ag
Trans MOSFET N-CH 500V 21A 3-Pin(2+Tab) D2PAK T/R

Product Details Search Results:

Infineon.com/SPB21N50C3
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"3.9V @ 1mA","Package / Case":"TO-263-3, D\u00b2Pak (2 Leads + Tab), TO-263AB","Current - Continuous Drain (Id) @ 25\u00b0C":"21A (Tc)","Gate Charge (Qg) @ Vgs":"95nC @ 10V","Product Photos":"TO-263","Product Training Modules":"CoolMOS\u2122 CP High Voltage MOSFETs Converters","Rds On (Max) @ Id, Vgs":"190 mOhm @ 13.1A, 10V","Datasheets":"SPB21N50C3","FET Type":"MOSFET N-Channel, Metal Oxide","Standard Package":"1","...
1911 Bytes - 12:51:58, 18 January 2026
Infineon.com/SPB21N50C3ATMA1
{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"5 ns","Typical Turn-Off Delay Time":"67 ns","Description":"Value","Maximum Continuous Drain Current":"21 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"190@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.5 ns"}...
1506 Bytes - 12:51:58, 18 January 2026
Infineon.com/SPB21N50C3E3045A
{"Category":"MOSFET","Maximum Drain Source Voltage":"500 V","Typical Rise Time":"5 ns","Typical Turn-Off Delay Time":"67 ns","Description":"Value","Maximum Continuous Drain Current":"21 A","Package":"3TO-263","Mounting":"Surface Mount","Maximum Gate Source Voltage":"\u00b120 V","Typical Turn-On Delay Time":"10 ns","Channel Mode":"Enhancement","Operating Temperature":"-55 to 150 \u00b0C","RDS-on":"190@10V mOhm","Manufacturer":"Infineon Technologies","Typical Fall Time":"4.5 ns"}...
1453 Bytes - 12:51:58, 18 January 2026

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