Product Datasheet Search Results:
9 Pages, 118 KB, Original- SPD18P06P
- Infineon Technologies
- Power MOSFET, -60V, DPAK, RDSon = 0.13 ?, -18.6A, NL
10 Pages, 522 KB, Original- SPD18P06P G
- Infineon Technologies
- P-Channel MOSFETs; Package: PG-TO252-3; Package: DPAK (TO-252); V<sub>DS</sub> (max): -60.0 V; R<sub>DS (on)</sub> (max) (@10V): 130.0 mOhm; R<sub>DS (on)</sub> (max) (@4.5V): -; R<sub>DS (on)</sub> (max) (@2.5V): -;
10 Pages, 534 KB, Original- SPD18P06PG
- Infineon Technologies
- Trans MOSFET P-CH 60V 18.6A 3-Pin(2+Tab) TO-252
11 Pages, 533 KB, Original- SPD18P06PGBTMA1
- Infineon Technologies
- MOSFET P-Ch -60V -18.6A DPAK-2
10 Pages, 534 KB, Original- SPD18P06PGXT
- Infineon Technologies Ag
- 18.6 A, 60 V, 0.13 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AB
Product Details Search Results:
Infineon.com/SPD18P06P
{"Category":"Discrete Semiconductor Products","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.2A, 10V","FET Feature":"Standard","Product Photos":"TO252-3","Family":"FETs - Single","Vgs(th) (Max) @ Id":"4V @ 1mA","Series":"SIPMOS\u00ae","Standard Package":"1","Supplier Device Package":"PG-TO252-3","Other Names":"SPD18P06PINDKR","Packaging":"Digi-Reel\u00ae","FET Type":"MOSFET P-Channel, Metal Oxide","Datasheets":"SPD,SPU18P06P","Power - Max":"80W","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Mounting Ty...
1727 Bytes - 09:30:44, 12 January 2026
Infineon.com/SPD18P06P G
{"Category":"Discrete Semiconductor Products","FET Feature":"Standard","Vgs(th) (Max) @ Id":"4V @ 1mA","Package / Case":"TO-252-3, DPak (2 Leads + Tab), SC-63","Current - Continuous Drain (Id) @ 25\u00b0C":"18.6A (Tc)","Gate Charge (Qg) @ Vgs":"33nC @ 10V","Product Photos":"TO252-3","Rds On (Max) @ Id, Vgs":"130 mOhm @ 13.2A, 10V","Datasheets":"SPD18P06P G","FET Type":"MOSFET P-Channel, Metal Oxide","PCN Packaging":"Cover Tape Width Update 17/Jun/2015 Cover Tape Width Cancellation 14/Jul/2015","Drain to Sou...
1923 Bytes - 09:30:44, 12 January 2026
Infineon.com/SPD18P06PG
{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"150 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"18.6 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1300 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"74.4 A","Channel Type":"P-CHANNEL",...
1538 Bytes - 09:30:44, 12 January 2026
Infineon.com/SPD18P06PGBTMA1
{"Product Category":"MOSFET","Series":"XPD18P06","Brand":"Infineon Technologies","Packaging":"Reel","RoHS":"Details","Manufacturer":"Infineon"}...
1081 Bytes - 09:30:44, 12 January 2026
Infineon.com/SPD18P06PGXT
{"Status":"ACTIVE","Channel Type":"P-CHANNEL","Package Body Material":"PLASTIC/EPOXY","Mfr Package Description":"GREEN, PLASTIC, TO-252, 3 PIN","Pulsed Drain Current-Max (IDM)":"74.4 A","Terminal Form":"GULL WING","Operating Mode":"ENHANCEMENT","Avalanche Energy Rating (Eas)":"150 mJ","Package Style":"SMALL OUTLINE","Drain Current-Max (ID)":"18.6 A","Transistor Element Material":"SILICON","Number of Elements":"1","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"SINGLE","Transistor Type":"GE...
1472 Bytes - 09:30:44, 12 January 2026
Documentation and Support
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| SPD18P06PG.pdf | 0.51 | 1 | Request |
