Datasheet.Directory

{"Terminal Finish":"NOT SPECIFIED","Terminal Form":"FLAT","Package Shape":"RECTANGULAR","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","EU RoHS Compliant":"Yes","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"0.1170 ohm","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","Channel Type":"P-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"30 V","Tran...

{"Polarity":"P","Gate-Source Voltage (Max)":"\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.8(W)","Continuous Drain Current":"2(A)","Mounting":"Surface Mount","Rad Hardened":"No","Drain-Source On-Volt":"30(V)","Packaging":"Tape and Reel","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"UFM","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...

{"Factory Pack Quantity":"3000","Vds - Drain-Source Breakdown Voltage":"- 30 V","Transistor Polarity":"P-Channel","Minimum Operating Temperature":"- 55 C","Channel Mode":"Enhancement","Forward Transconductance - Min":"3.1 S / 1.6 S","Brand":"Toshiba","Id - Continuous Drain Current":"- 2 A","Mounting Style":"SMD/SMT","Pd - Power Dissipation":"800 mW","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"160 mOhms","Package / Case":"SOT-323-3","Vgs - Gate-Source Breakdown Voltage"...

{"Category":"Discrete Semiconductor Products","FET Feature":"Logic Level Gate, 4V Drive","Product Photos":"UFM-SSM3J","Family":"FETs - Single","Vgs(th) (Max) @ Id":"2.6V @ 1mA","Series":"-","Standard Package":"3,000","Supplier Device Package":"UFM","Datasheets":"SSM3J117TU - Mosfets Prod Guide","Rds On (Max) @ Id, Vgs":"117 mOhm @ 1A, 10V","FET Type":"MOSFET P-Channel, Metal Oxide","Packaging":"Tape & Reel (TR)","Power - Max":"500mW","Package / Case":"3-SMD, Flat Leads","Mounting Type":"Surface Mount","Drai...