- BAS116T/R
- Nxp Semiconductors / Philips Semiconductors
- Low-leakage diode - C<sub>d</sub> max.: 2 pF; Configuration: single ; I<sub>F</sub> max: 215 mA; I<sub>FSM</sub> max: 4 A; I<sub>R</sub> max: 5@VR=75V nA; IFRM: 500 mA; t<sub>rr</sub> max: 3000 ns; V<sub>F</sub>max: 1@IF=10mA mV; V<sub>R</sub> max: 75 V
- BAS116T/R13
- Panjit Semiconductor
- 0.2 A, 100 V, SILICON, SIGNAL DIODE
- BAS116T/R7
- Panjit Semiconductor
- 0.2 A, 100 V, SILICON, SIGNAL DIODE